Method of passivating and encapsulating iii-v surfaces
AssigneeThe United States Government AS Represented By the Secretary of the Arm Y
InventorsDaniel B. Knorr, JR., Nathan C. Henry, Joseph L. Lenhart, Neil F. Baril, Meimei Tidrow, Sumith Bandara, Jan Andzelm, Kristen S. Williams
Life of this patent
Estimating the term…
Abstract
A method for producing a surfaced passivated, encapsulated surface III-V type II superlattice (T2SL) photodetector, more specifically a p-type heterojunction device by cleaning, etching and exposing the surface of a III/V material to solution mixtures which simultaneously removes oxides from the surface and encapsulates the surfaces.
Claims13
A method for producing a passivated, encapsulated III/V material surface comprising:
- a) cleaning a III/V material surface using an oxygen plasma ash to remove organic and surface oxides;
- b) etching the surface in an acid or a peroxide solution followed by a water rinse;
- c) submerging the surface in a first solution selected from the group consisting of a solvent, a sulfur molecule, a non-oxygen chalcogen-containing an organic molecule, a silane coupling agent, a phosphorous-based coupling agent, ammonia, phosphoric acid, hydrofluoric acid and mixtures thereof;
- d) wherein said first solution simultaneously removes oxides or other conductive components from the surface and deposits a passivation layer to the surface;
- d) exposing the surface of the III/V material to a second solution that is selected from the group consisting of a solvent, a sulfur molecule, a non-oxygen chalcogen-containing an organic molecule, a silane coupling agent, a phosphorous-based coupling agent, ammonia, phosphoric acid, hydrofluoric acid and mixtures thereof;
- and
- e) encapsulating the surface by a polymer deposition or an inorganic encapsulation.
A method for producing a passivated III/V material surface comprising:
- a) cleaning a III/V material surface using an oxygen plasma as to remove organic and surface oxides;
- b) etching the surface in an acid or a peroxide solution followed by a water rinse;
- c) submersing the surface in a solution for simultaneous etching/passivation, said solution consisting of a passivate molecule dissolved in 9 parts ethanol with 1 part 28% ammonium hydroxide;
- and
- d) immersing the solution in a water bath at about 40° C. for greater than 24 hours.
A method for producing a passivated III/V material surface comprising:
- a) cleaning a III/V material surface using an oxygen plasma as to remove organic and surface oxides;
- b) etching the surface in an acid or a peroxide solution followed by a water rinse;
- c) submersing the surface in a solution for simultaneous etching/passivation, said solution consisting of 100 mM of a cysteamine (passivate molecule) dissolved in pure ethanol;
- and
- d) immersing the solution in a water bath at about 40° C. for greater than 24 hours.
Dependencies are inferred from the claim text.