Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
AssigneeInternational Business Machines Corporation
InventorsShogo Mochizuki, Junli Wang
Life of this patent
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Abstract
A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, including forming one or more tubular vertical fins on a substrate, forming a first gate structure around an outer wall of at least one of the one or more tubular vertical fins, and forming a second gate structure within an inner wall of at least one of the one or more tubular vertical fins having the first gate structure around the outer wall.
Claims20
A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, comprising:
- forming one or more tubular vertical fins on a substrate;
- forming a first gate structure around an outer wall of at least one of the one or more tubular vertical fins;
- and
- forming a second gate structure within an inner wall of at least one of the one or more tubular vertical fins having the first gate structure around the outer wall.
A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, comprising:
- forming a plurality of sacrificial mandrels on a substrate;
- reducing the lateral dimensions of the sacrificial mandrels;
- forming a tubular vertical fin on each of the plurality of sacrificial mandrels;
- forming a first gate structure around an outer wall of at least one of the plurality tubular vertical fins;
- removing the plurality of sacrificial mandrels;
- and
- forming a second gate structure on at least a portion of an inner wall of each tubular vertical fin.
A vertical fin field effect transistor (vertical finFET) with a concentric gate structure, comprising:
- a tubular vertical fin;
- a first gate structure formed on at least a portion of the outer wall of the tubular vertical fin;
- and
- a second gate structure formed on at least a portion of the inner wall of the tubular vertical fin.
Dependencies are inferred from the claim text.