Mosfet device and fabrication

A method of fabricating a semiconductor device, comprising:

• forming an active gate trench, a source polysilicon pickup trench, and a gate pickup trench in a substrate;
• forming a first active gate trench conductive region in the active gate trench, a source polysilicon region in the source polysilicon pickup trench, and a first gate pickup trench conductive region in the gate pickup trench;
• disposing oxide in the active gate trench, in the source polysilicon pickup trench, and in the gate pickup trench;
• forming a second active gate trench conductive region in the active gate trench and a second gate pickup trench conductive region in the gate pickup trench;
• and
• implanting a body region in the substrate;
• wherein
• wherein at least a portion of the oxide surrounding the first gate pickup trench conductive region in the gate pickup trench is thicker than at least a portion of the oxide under the second gate pickup trench conductive region.