Nano mosfet with trench bottom oxide shielded and third dimensional p-body contact

A semiconductor power device, comprising:

• a lightly doped layer of a first conductivity type formed on top of a heavily doped layer of the first conductivity type;
• a body region of a second conductivity type opposite the first conductivity type formed at an upper portion of the lightly doped layer of the first conductivity type;
• a body contact region of the second conductivity type formed at an upper portion of the body region, wherein the body contact region is more heavily doped than the body region;
• and
• one or more field effect transistor devices, each of said one or more field effect transistor devices including first and second electrically insulated gate electrodes formed in corresponding first and second trenches in the lightly doped layer and a source region of the first conductivity type extending between a sidewall of the first trench and a sidewall of the second trench, wherein each of the first and second trenches has a depth that extends in a first dimension, a width that extends in a second dimension and a length that extends in a third dimension, wherein the first dimension is perpendicular to a plane of the heavily doped layer and wherein the second and third dimensions are parallel to the plane of the heavily doped layer,
• wherein a portion of the body region extends between the first and second trenches proximate an upper surface of the lightly doped layer;
• wherein the source region of the first conductivity type includes an upper portion formed proximate the upper surface and adjacent between the first and second trenches extending along the third dimension;
• and
• wherein each of the one or more field effect transistor devices further includes an opening formed between the first and second trenches through the upper portion of the source region and the body contact region of the second conductivity type to the body region, and a deep implant region of the second conductivity type formed in the lightly doped layer of a first conductivity type below the body region, wherein the deep implant region of the second conductivity type is vertically aligned to the opening and spaced away from a bottom of the opening.