Power mosfet semiconductor

A method for forming a semiconductor device, comprising:

• providing a semiconductor body of a first conductivity type;
• forming a first field-effect structure including a source region of the first conductivity type, a body region of a second conductivity type which is adjacent to the source region, a first gate electrode, and a first insulating region which is arranged at least between the first gate electrode and the body region such that the first gate electrode, the first insulating region and the body region form a first capacitor, the first capacitor having a first capacitance per unit area;
• forming a second field-effect structure including a source region of the first conductivity type, a body region of a second conductivity type which is adjacent to the source region, a second gate electrode and a second insulating region which is arranged at least between the second gate electrode and the body region such that the second gate electrode, the second insulating region and the body region form a second capacitor, the second capacitor having a second capacitance per unit area;
• and
• forming a source metallization at least in electrical contact to the source regions of the first and second field-effect structures and the second gate electrode;
• the first field-effect structure and the second field-effect structure being formed such that the second capacitance per unit area is higher than the first capacitance per unit area.