Power Semiconductor Device

A power semiconductor device having a semiconductor body configured to conduct a load current in parallel to an extension direction between a first load terminal and a second load terminal of the power semiconductor device, the semiconductor body comprising:

• a doped contact region electrically connected to the second load terminal, wherein the contact region is at least partially an epitaxially grown contact region;
• a doped drift region having a dopant concentration that is smaller than a dopant concentration of the contact region;
• and
• an epitaxially grown doped transition region separated from the second load terminal by the contact region and that couples the contact region to the drift region, the transition region comprising:
• an upper subregion in contact with the drift region and having a dopant concentration that varies along the extension direction and has a maximum dopant concentration that is at least 0.5*1015 cm−3;
• a lower subregion in contact with the contact region and having a dopant concentration that varies along the extension direction;
• and
• a central subregion having a dopant concentration that varies along the extension direction and being arranged in between the upper subregion and the lower subregion and which has a maximum dopant concentration which is at least a factor 5 higher than the maximum dopant concentration of the upper subregion, wherein each of the upper subregion, the central subregion and the lower subregion has a maximum dopant concentration gradient of at most 3*1022 cm−4, and wherein the maximum dopant concentration of the lower subregion is at least a factor of 100 higher than the maximum dopant concentration of the upper subregion.