Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a plurality of grooves each having an elongated shape in plan view with a gap between them in a main surface of a semiconductor substrate by using a plurality of mask patterns;
• forming a separation insulating film by burying an insulating film into the groove;
• forming a well region in contact with a lower surface of the separation insulating film in the semiconductor substrate and an active region in contact with an upper surface of the well region;
• and
• forming an input terminal and an output terminal over the semiconductor substrate so as to be electrically coupled to the well region,
• wherein in an intermediate region between the input terminal and the output terminal, the separation insulating film and the active region have an elongated shape in plan view, and
• in the intermediate region, a plurality of the separation insulating films and a plurality of the active regions are formed so that the separation insulating film and the active region are alternately and repeatedly arranged.