Image Sensor Device and Method

A semiconductor device comprising:

• a void surrounded by an encapsulating material, wherein the void is void of solid material and the encapsulating material has a constant composition;
• color filters on opposing sides of the void, the encapsulating material fully covering sidewalls of each of the color filters;
• and
• a substrate over the color filters, the substrate comprising photodiodes located over respective ones of the color filters.

A semiconductor device comprising:

• a first photodiode and a second photodiode located within a substrate and separated from each other by an isolation region;
• a first color filter and a second color filter located in a first plane over the substrate;
• a gap located in the first plane and over the isolation region, the gap being void of solid material;
• and
• an encapsulating material surrounding the gap and having a height at least as high as the first color filter.