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US 2017/0373108 A1Published application
Image sensor including transfer gates in deep trenches
AssigneeSK hynix Inc.
InventorsKwang HWANGBO, Sung-Kun PARK
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Abstract
An image sensor is described. The image sensor includes a photodiode that is formed in a substrate, a floating diffusion region that vertically overlaps with a first portion of the photodiode, a shallow trench isolation (STI) region that vertically overlaps with a second portion of the photodiode and has an elbow shape, and a transfer gate that is adjacent to at least two sides of the photodiode and has an elbow shape.
Claims20
An image sensor, comprising:
- a photodiode formed in a substrate;
- a floating diffusion region that vertically overlaps with first portion of the photodiode;
- a shallow trench isolation (STI) region that vertically overlaps with a second portion of the photodiode and has an elbow shape;
- and
- a transfer gate that is adjacent to at least two sides of the photodiode and has an elbow shape.
2 more elements
An image sensor, comprising:
- a first photodiode and a second photodiode that are formed adjacent to each other in a substrate;
- a transfer gate that is disposed between the first photodiode and the second photodiode;
- a floating diffusion region that is adjacent to a first side of the transfer gate and vertically overlaps with a portion of the first photodiode;
- and
- a shallow trench isolation (STI) region that is adjacent to a second side of the transfer gate and vertically overlaps with a portion of the second photodiode.
2 more elements
An image sensor, comprising:
- a plurality of unit pixels that are arranged in a matrix form,
- wherein each of the plurality of the unit pixels includes:
- a photodiode that has a substantially square shape in a top view;
- a shallow trench isolation (STI) region that vertically overlaps with a first portion of the photodiode adjacent to an upper side and a left side of the photodiode;
- a trench that surrounds an external side of the photodiode to be adjacent to a lower side and a right side of the photodiode;
- a transfer gate that is formed in the trench;
- and
- a floating diffusion region that is disposed adjacent to the transfer gate and vertically overlaps with a portion of the photodiode.
5 more elements
Dependencies are inferred from the claim text.