Semiconductor package and method for producing same

A semiconductor package including:

• a support;
• semiconductor chips arranged on one surface of the support via an adhesive layer, with element circuit surfaces of the semiconductor chips facing upward;
• an insulating material layer that encapsulates the semiconductor chips and the periphery thereof;
• in the insulating material layer, openings formed on electrodes that are placed on the element circuit surfaces of the semiconductor chips;
• conductive parts formed in the openings to connect with the electrodes of the semiconductor chips;
• wiring layers formed on the insulating material layer to connect with the conductive parts and partially extended to peripheral regions of the semiconductor chips;
• and
• external electrodes formed on the wiring layers, wherein
• the support is formed by a copper plated object having cavity parts that accept the semiconductor chips on the one surface, the semiconductor chips being accommodated in the respective cavity parts, and
• the insulating material layer is on the other surface of the support.

A method for producing a semiconductor package, including, in the following order, the steps of:

• laying a copper foil on one main face of a support flat plate;
• performing electroplating to form a copper plating layer on the copper foil;
• performing electroplating to form cavity parts on the copper plating layer;
• fixing surfaces opposite to element circuit surfaces of the semiconductor chips in the cavity parts with an adhesive;
• resin-encapsulating the semiconductor chips with an insulating resin to form an encapsulation resin layer;
• forming openings in the insulating material layer upon positions corresponding to electrodes arranged on the element circuit surfaces of the semiconductor chips;
• forming, on the insulating material layer, wiring layers partially extended to peripheral regions of the semiconductor chips, and forming, in the openings of the insulating material layer, conductive parts connected to the electrodes of the semiconductor chips;
• forming a solder resist on the wiring layer except in portions corresponding to the openings;
• forming external electrodes on parts of the wiring layer corresponding to the openings;
• separating the support flat plate from the copper foil;
• and
• forming an insulating material layer on the copper foil after separation.

A method for producing a semiconductor package having a support flat plate, including, in the following order, the steps of:

• laying a copper foil on one main face of the support flat plate;
• performing electroplating to form a copper plating layer on the copper foil;
• performing electroplating to form cavity parts on the copper plating layer;
• fixing surfaces opposite to element circuit surfaces of the semiconductor chips in the cavity parts with an adhesive;
• resin-encapsulating the semiconductor chips with an insulating resin to form an encapsulation resin layer;
• forming openings in the insulating material layer upon positions corresponding to electrodes arranged on the element circuit surfaces of the semiconductor chips;
• forming, on the insulating material layer, wiring layers partially extended to peripheral regions of the semiconductor chips, and forming, in the openings of the insulating material layer, conductive parts connected to the electrodes of the semiconductor chips;
• forming a solder resist on the wiring layer except in portions corresponding to the openings;
• and
• forming external electrodes on parts of the wiring layer corresponding to the openings.

A method for producing a semiconductor package, including, in the following order, the steps of:

• laying a copper foil on each of both surfaces of a support flat plate;
• performing electroplating to form a copper plating layer on the copper foil;
• performing electroplating to form cavity parts on the copper plating layer;
• fixing surfaces opposite to element circuit surfaces of the semiconductor chips in the cavity parts with an adhesive;
• resin-encapsulating the semiconductor chips with an insulating resin to form an encapsulation resin layer;
• forming openings in the insulating material layer upon positions corresponding to electrodes arranged on the element circuit surfaces of the semiconductor chips;
• forming, on the insulating material layer, wiring layers partially extended to peripheral regions of the semiconductor chips, and forming, in the openings of the insulating material layer, conductive parts connected to the electrodes of the semiconductor chips;
• forming a solder resist on the wiring layer except in portions corresponding to the openings;
• forming external electrodes on parts of the wiring layer corresponding to the openings
• to form package parts on both surfaces of the support flat plate;
• separating the support flat plate from the copper foils of the package parts to obtain two package parts;
• and
• forming an insulating material layer on the copper foils of the two package parts.