LDMOS Transistor and Method
AssigneeInfineon Technologies AG
InventorsAlbert Birner, Helmut Brech, Matthias Zigldrum
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Abstract
In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor arranged in the front surface of the substrate and having an intrinsic source, and a through substrate via. A first conductive layer lines sidewalls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source.
Claims29
A method for electrically coupling an electrode of a transistor structure arranged at a first surface of a substrate to a third conductive layer arranged at a second surface of the substrate opposing the first surface, the method comprising:
- forming a blind via in the substrate adjacent the transistor structure;
- depositing a first conductive layer onto side walls of the blind via and a region of a second conductive layer arranged on the first surface of the substrate adjacent the blind via and coupled to the electrode of the transistor structure;
- working the second surface of the substrate so as to expose a portion of the first conductive layer;
- and
- depositing a third conductive layer onto the second surface of the substrate and the portion of the first conductive layer so as to electrically couple the third conductive layer with the electrode of the transistor structure.
A semiconductor device, comprising:
- a semiconductor substrate comprising a front surface;
- a LDMOS transistor arranged in the front surface of the semiconductor substrate and having an intrinsic source;
- and
- a through substrate via,
- wherein a first conductive layer lines side walls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source.
Dependencies are inferred from the claim text.