Systems and Methods for Thermal Conduction Using S-Contacts
AssigneePeregrine Semiconductor Corporation
InventorChris Olson
Life of this patent
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Abstract
An integrated circuit architecture that provides a path having relatively low thermal resistance between one or more electronic devices and one or more thermal structures formed on an insulator layer on a substrate. Independent parallel thermal conduction paths are provided through the insulator layer, such as a buried oxide (“BOX”) layer, to allow heat to flow from the substrate layer to a thermal structure disposed upon the BOX layer. In some cases, the substrate is a silicon substrate layer supporting the thermal structure and a heat source, such as an electronic device (e.g., power amplifier, transistor, diode, resistor, etc.).
Claims23
A semiconductor structure comprising:
- (a) a substrate;
- (b) an insulator layer on the substrate;
- (c) a thermal structure on the insulator layer;
- and
- (d) a plurality of substrate contacts (“S-contacts”) penetrating the insulator layer to thermally connect the substrate with the thermal structure and spaced over an area that underlies the thermal structure.
A method for forming a semiconductor structure, including:
- (a) providing a substrate;
- (b) forming an insulator layer on the substrate;
- (c) forming a thermal structure on the insulator layer;
- and
- (d) forming a plurality of S-contacts penetrating the insulator layer to thermally connect the substrate with the thermal structure and spaced over an area that underlies the thermal structure.
Dependencies are inferred from the claim text.