Integrated Circuit Devices

An integrated circuit device comprising:

• a substrate having a first region and a second region;
• a first transistor in the first region;
• and
• a second transistor in the second region,
• wherein the first transistor comprises:
• a first fin-shaped active region protruding from the substrate;
• a hydrogen atomic layer contacting a top surface and opposite sidewalls of the first fin-shaped active region;
• a first gate insulation layer covering the hydrogen atomic layer;
• and
• a first gate electrode covering the first gate insulation layer on the top surface and on the opposite sidewalls of the first fin-shaped active region, and
• wherein the second transistor comprises:
• a second fin-shaped active region protruding from the substrate;
• a second gate insulation layer contacting a top surface and opposite sidewalls of the second fin-shaped active region;
• and
• a second gate electrode covering the second gate insulation layer on the top surface and on the opposite sidewalls of the second fin-shaped active region.

An integrated circuit device comprising:

• a substrate having a first local region and a second local region;
• a first transistor in the first local region;
• and
• a second transistor in the second local region,
• wherein the first transistor comprises:
• a first channel region having a first width;
• a first gate insulation layer covering the first channel region;
• a first gate electrode covering the first channel region with the first gate insulation layer interposed between the first channel region and the first gate electrode;
• and
• a hydrogen atomic layer extending along an interface between the first channel region and the first gate insulation layer, and
• wherein the second transistor comprises:
• a second channel region having a second width different from the first width;
• a second gate insulation layer contacting the second channel region;
• and
• a second gate electrode covering the second channel region with the second gate insulation layer interposed between the second channel region and the second gate electrode.