System and Method for Widening Fin Widths for Small Pitch FinFET Devices

A semiconductor device, comprising:

• a semiconductor layer having a fin structure that protrudes out of the semiconductor layer, wherein the fin structure includes a first segment and a second segment disposed over the first segment;
• a dielectric layer disposed over the semiconductor layer, wherein the first segment of the fin structure is embedded within the dielectric layer;
• and
• a metal layer disposed over the dielectric layer, wherein the second segment of the fin structure is embedded within the metal layer, and wherein the first segment of the fin structure has a first side surface that is rougher than a second side surface of the second segment of the fin structure.

semiconductor device, comprising:

• a semiconductor fin that includes a first segment and a second segment disposed over the first segment, the semiconductor fin including a channel of a FinFET;
• a dielectric structure disposed around the first segment of the semiconductor fin;
• and
• a metal gate electrode disposed over the dielectric structure;
• wherein:
• the second segment of the semiconductor fin is surrounded by the metal gate electrode;
• a nitrogen content of the dielectric structure is greater than a nitrogen content of the metal gate electrode;
• and
• the first segment of the semiconductor fin has a greater side surface roughness than the second segment of the semiconductor fin.