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US 2017/0372956 A1Published application
Self-aligned contact
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
Life of this patent
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Abstract
A semiconductor device includes a gate structure having a gate conductor and a sidewall spacer. A partial dielectric cap is formed on the gate conductor and extends less than a width of the gate conductor. A self-aligned contact is formed adjacent to the sidewall spacer of the gate structure and is electrically isolated from the gate conductor by the partial dielectric cap and the sidewall spacer.
Claims18
A semiconductor device, comprising:
- a gate structure having a gate conductor and at least one sidewall spacer;
- a partial dielectric cap formed on the gate conductor and extending less than a width of the gate conductor, wherein a lower portion of the partial dielectric cap is between the gate conductor and the at least one sidewall spacer;
- and
- a self-aligned contact formed adjacent to the at least one sidewall spacer of the gate structure and being electrically isolated from the gate conductor by the partial dielectric cap and the at least one sidewall spacer.
1 more element
A semiconductor device, comprising:
- a substrate having source/drain regions formed therein;
- a plurality of gate structures, each having a gate conductor and at least one sidewall spacer;
- a partial dielectric cap formed on at least one of the gate conductors and extending less than a width of the gate conductors;
- a liner formed over the gate conductors and at least one sidewall spacer, the liner covering a portion of the gate conductors not covered by the partial dielectric cap, wherein a lower portion of the partial dielectric cap is between the gate conductor and the at least one sidewall spacer;
- and
- a self-aligned contact formed adjacent to the at least one sidewall spacer of at least some of the gate structures to contact the source/drain regions and being electrically isolated from the gate conductors by the partial dielectric cap and the at least one sidewall spacer.
3 more elements
18-20. (canceled)
Dependencies are inferred from the claim text.