Semiconductor devices, circuits and methods for read and/or write assist of an sram circuit portion based on voltage detection and/or temperature detection circuits

A semiconductor device powered by a first power supply potential, comprising:

• a voltage detector circuit coupled to receive the first power supply potential and configured to generate a first potential that is essentially proportional to the first power supply potential at a first node, the voltage detector circuit further configured to provide a first voltage window signal and a second voltage window signal by comparing the first potential to a first reference potential and a second reference potential, the first voltage window signal indicates a first voltage window in which the first power supply potential is located and the second voltage window signal indicates a second voltage window different from the first voltage window in which the first power supply potential is located;
• an assist control circuit coupled to receive the first voltage window signal and the second voltage window signal and configured to provide at least one assist signal;
• and
• at least one a static random access memory (SRAM) cell;
• wherein
• the at least one assist signal alters a read operation or a write operation to the SRAM cell as compared to a read operation or write operation without the at least one assist signal.