Method of manufacturing semiconductor device, and semiconductor device

A method of manufacturing a semiconductor device, comprising:

• a mesa portion formation step of forming a mesa portion above a substrate, the mesa portion including a p-type layer, an active layer above the p-type layer, and an n-type layer above the active layer,
• a current confinement portion formation step of forming a current confinement portion on left and right of the mesa portion, the current confinement portion including a p-type current blocking layer, an n-type current blocking layer above the p-type current blocking layer, and an i-type or p-type current blocking layer above the n-type current blocking layer, and
• a p-type doping step of diffusing p-type impurities in a vapor or solid phase into the i-type or p-type current blocking layer, an upper portion of the n-type current blocking layer, and left and right portions of the n-type layer to change the upper portion of the n-type current blocking layer and the left and right portions of the n-type layer to p-type semiconductors.