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US 2017/0365781 A1Published application
Reram using stack of iron oxide and graphene oxide films
AssigneeGwangju Institute of Science and Technology
InventorsJAE HYUNG JANG, RANI ANOOP, SE I OH
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Abstract
There is provided a non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode.
Claims9
A non-volatile memory device comprising:
- a substrate;
- a lower electrode disposed on the substrate;
- a resistance layer disposed on the lower electrode;
- and
- an upper electrode disposed on the resistance layer,
- wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film,
- wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode.
4 more elements
A method for manufacturing a non-volatile resistive switching memory device, the method comprising:
- providing a substrate:
- forming a lower electrode on the substrate;
- forming a stack of a graphene oxide film and an iron oxide film on the lower electrode
- using a solution process, wherein the stack acts as a resistance layer for the device;
- and
- forming an upper electrode on the stack,
- wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode.
4 more elements
Dependencies are inferred from the claim text.