Systems and methods for thermal hydro-synthesis of semiconductor materials by holding a substrate wafer within a chamber in a vertical direction

A method for fabricating a light emitting diode (LED) device including a ZnO structure, comprising:

• holding a substrate wafer within a chamber so that a surface of the substrate wafer is along a vertical direction along a gravitational field, wherein the substrate wafer is previously processed to include light-emitting semiconductor layers operable to emit light under electrical excitation;
• spinning the substrate wafer to spin about a horizontal axis;
• and
• while maintaining the substrate wafer to spin about the horizontal axis, performing a thermal hydro synthesis process to grow a single crystal ZnO structure over the light-emitting semiconductor layers to achieve a high quality in the grown single crystal ZnO structure.

A device for fabricating a semiconductor material device, comprising:

• an exterior housing structured to form a closure and a top opening door to open or close the closure;
• a chemical circulation tank, located inside the exterior housing, structured to hold a fluid and to include a top opening door to open or close the chemical circulation tank;
• a growth chamber, located inside the chemical circulation tank, structured to hold a fluid and to include a top opening door to open or close the growth chamber, the growth chamber including an overflow path to allow a liquid inside the growth chamber to flow into the chemical circulation tank;
• a first chemical supply line coupled to the growth chamber to supply a first chemical liquid into the growth chamber;
• a second chemical supply line, separated from the first chemical supply line, coupled to the growth chamber to supply a second chemical liquid into the growth chamber;
• one or more heating units coupled to the growth chamber, the first chemical supply line or the second chemical supply line, to apply heat provide a controlled heated condition of a chemical liquid inside the growth chamber;
• an actuator arm located inside the exterior housing to include an extension arm to reach into the growth chamber via the chemical circulation tank, wherein the extension arm is structured to removably engage to a removable wafer holding cassette that includes vertical wafer holding slots for holding wafers inside the growth chamber for growing material layers on the wafers and is removable from the extension arm through the top opening of the growth chamber, the top opening of the chemical circulation tank and the top opening of the exterior housing;
• and
• a motor engaged to the actuator arm and operable to cause motion of the actuator arm so as to move a position of the removable wafer holding cassette inside the growth chamber during growth of material layers on the wafers.

A method for fabricating a semiconductor material device, comprising:

• placing a batch of wafers into a growth chamber along a vertical direction;
• operating a first chemical supply line coupled to the growth chamber to supply a first chemical liquid into the growth chamber;
• operating a second chemical supply line, separated from the first chemical supply line, coupled to the growth chamber to supply a second chemical liquid into the growth chamber to mix with the first chemical liquid to form a chemical solution for growing a layer over the wafers;
• pre-heating the first chemical liquid in the first chemical supply line and the second chemical liquid in the second chemical supply line to place the chemical solution in the growth chamber in a controlled heated condition for growing the layer over the wafers;
• and
• causing motion of the wafers in the chemical solution during growth of the layer on the wafers.