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US 2017/0365725 A1Published application
Electrical and optical via connections on a same chip
AssigneeGlobalfoundries Inc.
InventorsJuntao LI, Kangguo CHENG, Chengwen PEI, Geng WANG, Joseph ERVIN
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to electrical and optical via connections on a same chip and methods of manufacture. The structure includes an optical through substrate via (TSV) comprising an optical material filling the TSV. The structure further includes an electrical TSV which includes a liner of the optical material and a conductive material filling remaining portions of the electrical TSV.
Claims20
A structure, comprising:
- an optical through substrate via (TSV) formed in a substrate and comprising an optical material filling the TSV, the optical TSV being an annular shaped via formed around a core portion comprised of a portion of the substrate, wherein the annular via has a via width “d1” between an inner wall of the annular via adjacent to the core portion and an outer wall of the annular via spaced apart from the core portion, and wherein the core portion has “d2”;
- and
- an electrical TSV formed in the substrate and comprising a liner of the optical material and an electrically conductive material filling remaining portions of the electrical TSV, wherein the electrical TSV has a diameter of “D1”, where D1>d1.
A structure comprising:
- an optical through silicon via (TSV) formed in the silicon and having an annular shape filled with an optical material which surrounds a core composed of the silicon;
- an electrical TSV formed in the silicon and having a via shape and comprising a liner of the optical material and an electrically conductive material filling remaining portions of the electrical TSV;
- wherein the optical material is recessed in the silicon and an airgap is formed in the silicon and in alignment with a recessed surface of the optical material of the optical TSV;
- and
- a photodetector in alignment with the airgap and the optical TSV, wherein the airgap is interposed between the photodetector and the recessed surface of the optical material of the optical TSV.
2 more elements
A method comprising:
- forming a first via of an annular shape having a core region of substrate material and a second via of a different shape than the first via in a substrate using a same lithography process;
- filling the first via with optical material which surrounds the core region composed of the substrate material while forming a liner on sidewalls of the second via with the optical material, in a same deposition process;
- filling remaining portions of the second via with electrically conductive material;
- removing a back side of the substrate to form an annular optical TSV comprising the first via with the optical material and the core region and an electrical via from the second via with the optical material and the electrically conductive material;
- and
- forming an airgap in the substrate in alignment with the annular optical TSV by recessing the optical material and the core region of substrate material in the first via;
- and
- bonding a photodetector to the substrate in alignment with the airgap and a recessed surface of the optical material and the core region of the substrate material in the first via.
5 more elements
(canceled)
Dependencies are inferred from the claim text.