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US 2017/0365719 A1Published application
Negative Capacitance Field Effect Transistor
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsMiin-Jang Chen, Chi-Wen Liu, Bo-Ting Lin
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Abstract
A gate structure of a negative capacitance field effect transistor (NCFET) is disclosed. The NCFET includes a gate stack disposed over a substrate. The gate stack includes a dielectric material layer, a ferroelectric ZrO2 layer and a first conductive layer. The NCFET also includes a source/drain feature disposed in the substrate adjacent the gate stack.
Claims23
A semiconductor device comprising:
- a substrate;
- and
- a ferroelectric capacitor disposed over the substrate, wherein the ferroelectric capacitor includes:
- a first conductive layer disposed over the substrate;
- a ferroelectric ZrO2 layer disposed over the first conductive layer, wherein the ferroelectric ZrO2 layer consists essentially of ZrO2;
- and
- a second conductive layer disposed over the ferroelectric ZrO2 layer.
4 more elements
(canceled)
10-20. (canceled)
A capacitor comprising:
- a semiconductor substrate;
- a first conductive layer disposed over a semiconductor substrate;
- a ferroelectric ZrO2 layer disposed over the first conductive layer;
- a dielectric layer disposed over the first conductive layer;
- and
- a second conductive layer disposed over the dielectric layer,
- wherein the capacitor has a first positive capacitance,
- wherein the ferroelectric ZrO2 layer contributes to a negative capacitance,
- wherein the ferroelectric ZrO2 layer consists essentially of ZrO2 and
- wherein the dielectric layer contributes to a second positive capacitance.
7 more elements
A device comprising:
- a semiconductor substrate;
- and
- a capacitor disposed over the semiconductor substrate, wherein the capacitor includes:
- a dielectric layer disposed over the semiconductor substrate;
- a first conductive layer disposed over the semiconductor substrate;
- a second conductive layer disposed over the semiconductor substrate;
- and
- a ferroelectric ZrO2 layer disposed over the semiconductor substrate,
- wherein the capacitor has a first positive capacitance,
- wherein the ferroelectric ZrO2 layer consists essentially of ZrO2 and contributes to a negative capacitance, and
- wherein the dielectric layer contributes to a second positive capacitance.
8 more elements
29-30. (canceled)
Dependencies are inferred from the claim text.