Lateral super-junction mosfet device and termination structure

A lateral superjunction MOSFET device, comprising:

• a semiconductor body comprising a lateral superjunction structure including a plurality of alternating N-type and P-type thin semiconductor regions formed substantially in parallel with a major surface of the semiconductor body, the alternating N-type and P-type thin semiconductor regions forming a drain drift region of the MOSFET device;
• a body region of a first conductivity type formed in a first surface of the semiconductor body, the body region comprising a plurality of body region fingers arranged laterally on the first surface of the semiconductor body;
• a conductive gate formed on the semiconductor body at a near end of the lateral superjunction structure and insulated from the semiconductor body by a gate dielectric layer, the conductive gate comprising a plurality of conductive gate fingers arranged laterally on the semiconductor body, each conductive gate fingers being adjacent to and overlapping a respective body region finger;
• a source region of a second conductivity type, opposite the first conductivity type and comprising a plurality of source region fingers, each source region finger being formed in a body region finger and self-aligned with a first side of a conductive gate finger, each source region finger extending under the first side of the respective conductive gate finger to form a small overlap;
• a body contact region of the first conductivity type and comprising a plurality of body contact region fingers, each body contact region fingers being formed in a body region finger and adjacent to a source region finger formed therein;
• and
• a drain region of the second conductivity type formed at a distant end of the lateral superjunction structure, the drain region extending through the lateral superjunction structure, the drain region comprising a plurality of drain region fingers,
• wherein the lateral superjunction MOSFET device comprises a plurality of transistor cells connected in parallel, each transistor cell comprising a conductive gate finger, a source region finger, a body contact region finger and a drain region finger arranged laterally within each transistor cell, each of the drain region fingers and the body contact region fingers comprises a heavily doped region finger having a termination region at an end of the heavily doped region finger, the lateral superjunction MOSFET device further comprising a termination structure formed in the termination region of each heavily doped region finger and including one or more lightly doped termination columns having the same conductivity type as the heavily doped region finger and positioned near the end of the heavily doped region finger.

A lateral superjunction MOSFET device, comprising:

• a semiconductor body comprising a lateral superjunction structure including a plurality of alternating N-type and P-type thin semiconductor regions formed substantially in parallel with a major surface of the semiconductor body, the alternating N-type and P-type thin semiconductor regions forming a drain drift region of the MOSFET device;
• a body region of a first conductivity type formed in a first surface of the semiconductor body, the body region comprising a plurality of body region fingers arranged laterally on the first surface of the semiconductor body;
• a conductive gate formed on the semiconductor body at a near end of the lateral superjunction structure and insulated from the semiconductor body by a gate dielectric layer, the conductive gate comprising a plurality of conductive gate fingers arranged laterally on the semiconductor body, each conductive gate fingers being adjacent to and overlapping a respective body region finger;
• a source region of a second conductivity type, opposite the first conductivity type and comprising a plurality of source region fingers, each source region finger being formed in a body region finger and self-aligned with a first side of a conductive gate finger, each source region finger extending under the first side of the respective conductive gate finger to form a small overlap;
• a body contact region of the first conductivity type and comprising a plurality of body contact region fingers, each body contact region fingers being formed in a body region finger and adjacent to a source region finger formed therein;
• and
• a drain region of the second conductivity type formed at a distant end of the lateral superjunction structure, the drain region extending through the lateral superjunction structure, the drain region comprising a plurality of drain region fingers,
• wherein the lateral superjunction MOSFET device comprises a plurality of transistor cells connected in parallel, each transistor cell comprising a conductive gate finger, a source region finger, a body contact region finger and a drain region finger arranged laterally within each transistor cell, each of the drain region fingers and the body contact region fingers comprises a heavily doped region finger, wherein the source region fingers and the body contact region fingers are formed on the first surface extending from a source-body pad in a first direction, and the drain region fingers are formed on the first surface extending from a drain pad in a second direction, opposite the first direction, wherein in each transistor cell, the body contact region finger is formed interleaved between the source region finger and the drain region finger.

A lateral superjunction MOSFET device, comprising:

• a semiconductor body comprising a lateral superjunction structure including a plurality of alternating N-type and P-type thin semiconductor regions formed substantially in parallel with a major surface of the semiconductor body, the alternating N-type and P-type thin semiconductor regions forming a drain drift region of the MOSFET device;
• a body region of a first conductivity type formed in a first surface of the semiconductor body, the body region comprising a plurality of body region fingers arranged laterally on the first surface of the semiconductor body;
• a conductive gate formed on the semiconductor body at a near end of the lateral superjunction structure and insulated from the semiconductor body by a gate dielectric layer, the conductive gate comprising a plurality of conductive gate fingers arranged laterally on the semiconductor body, each conductive gate fingers being adjacent to and overlapping a respective body region finger;
• a source region of a second conductivity type, opposite the first conductivity type and comprising a plurality of source region fingers, each source region finger being formed in a body region finger and self-aligned with a first side of a conductive gate finger, each source region finger extending under the first side of the respective conductive gate finger to form a small overlap;
• a body contact region of the first conductivity type and comprising a plurality of body contact region fingers, each body contact region fingers being formed in a body region finger and adjacent to a source region finger formed therein;
• a first column of the first conductivity type formed under and in electrical contact with the body contact region finger formed therein, the first column extending through the lateral superjunction structure;
• and
• a drain region of the second conductivity type formed at a distant end of the lateral superjunction structure, the drain region extending through the lateral superjunction structure, the drain region comprising a plurality of drain region fingers.