Method of forming a semiconductor device and structure therefor

A method of forming a semiconductor device comprising:

• providing a semiconductor substrate;
• forming a semiconductor region of a first conductivity type on a surface of the semiconductor substrate, the semiconductor region having a major surface;
• forming a first opening extending from the major surface a first distance into the semiconductor region;
• forming a second opening extending from the major surface substantially the first distance into the semiconductor region;
• forming a first semiconductor material in the first opening, the first semiconductor material having a second conductivity type that is opposite to the conductivity type of the first conductivity type, the first semiconductor material forming a first P-N junction with the semiconductor region, the first semiconductor material forming one of a drain of a transistor or an anode of a diode;
• and
• forming a doped semiconductor region in the second opening, the doped semiconductor region having the second conductivity type, the doped semiconductor region forming a second P-N junction with an adjacent semiconductor material, the doped semiconductor region forming one of a source of the transistor or a cathode of the diode.

A method of forming a semiconductor device comprising:

• forming a first semiconductor region of a first conductivity type overlying semiconductor substrate;
• forming one or more openings extending from a major surface of the first semiconductor region a distance into the first semiconductor region;
• forming a first current carrying electrode of the semiconductor device in a first portion of the one of more openings;
• and
• forming a second current carrying electrode of the semiconductor device in a second portion of the one of more openings wherein a first portion of the first semiconductor region is disposed between the first and second current carrying electrodes and separates the first and second current carrying electrodes from each other.