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US 2017/0365643 A1Published application
Parallel configured resistive memory elements
AssigneeAltera Corporation
InventorsPeter John McElheny, Yue-Song He
Life of this patent
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Abstract
The present invention discloses a memory cell that includes at least two non-volatile resistive memory elements coupled in parallel. The non-volatile resistive memory elements are capable of existing in different resistive states such that each of the different resistive state represents a different data state. The non-volatile resistive memory elements may include multiple layers formed within contact holes.
Claims14
A memory cell comprising:
- a first non-volatile resistive memory element that is formed in a first contact hole in a dielectric layer, wherein the dielectric layer is formed between first and second metal layers, wherein the first non-volatile resistor memory element comprises a top electrode layer that physically contacts the first metal layer, a bottom electrode layer that physically contacts the second metal layer, and an oxide layer that is interposed between the top and bottom electrode layers and that physically contacts the top and bottom electrode layers;
- and
- a second non-volatile resistive memory element that is formed in a second contact hole in the dielectric layer and that is coupled in parallel to the first non-volatile resistive memory element.
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A memory cell comprising:
- a first metal layer;
- a second metal layer;
- a contact hole that extends from the first metal layer to the second metal layer;
- a non-volatile resistive memory element that is formed in the contact hole and that includes only three layers.
1 more element
Dependencies are inferred from the claim text.