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US 2017/0365625 A1Published application
Display device, semiconductor device, and driving method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAtsushi UMEZAKI, Hajime KIMURA
Life of this patent
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Abstract
An object is to provide a semiconductor device with improved operation. The semiconductor device includes a first transistor, and a second transistor electrically connected to a gate of the first transistor. A first terminal of the first transistor is electrically connected to a first line. A second terminal of the first transistor is electrically connected to a second line. The gate of the first transistor is electrically connected to a first terminal or a second terminal of the second transistor.
Claims9
(canceled)
A semiconductor device comprising:
- a shift register comprising:
- a first transistor;
- a second transistor;
- a third transistor;
- a fourth transistor;
- a fifth transistor;
- a sixth transistor;
- and
- a seventh transistor,
- wherein one of a source and a drain of the first transistor is electrically connected to a first line, the other of the source and the drain of the first transistor is electrically connected to a second line,
- wherein one of a source and a drain of the second transistor is electrically connected to a third line, the other of the source and the drain of the second transistor is electrically connected to the second line,
- wherein one of a source and a drain of the third transistor is electrically connected to the third line,
- wherein the other of the source and the drain of the third transistor is electrically connected to the second line,
- wherein one of a source and a drain of the fourth transistor is electrically connected to the second line, the other of the source and the drain of the fourth transistor is electrically connected to a gate of the first transistor, a gate of the fourth transistor is electrically connected to a gate of the second transistor,
- wherein one of a source and a drain of the fifth transistor is electrically connected to a fourth line,
- wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the first transistor,
- wherein one of a source and a drain of the sixth transistor is electrically connected to the fourth line,
- wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the first transistor,
- wherein one of a source and a drain of the seventh transistor is electrically connected to the third line,
- wherein the other of the source and the drain of the seventh transistor is electrically connected to the gate of the first transistor,
- wherein a gate of the seventh transistor is electrically connected to a gate of the third transistor,
- wherein each channel region of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, and the seventh transistor includes an oxide semiconductor.
19 more elements
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a third transistor;
- a fourth transistor;
- a fifth transistor;
- a sixth transistor;
- and
- a seventh transistor,
- wherein one of a source and a drain of the first transistor is electrically connected to a first line, the other of the source and the drain of the first transistor is electrically connected to a second line,
- wherein one of a source and a drain of the second transistor is electrically connected to a third line, the other of the source and the drain of the second transistor is electrically connected to the second line,
- wherein one of a source and a drain of the third transistor is electrically connected to the third line,
- wherein the other of the source and the drain of the third transistor is electrically connected to the second line,
- wherein one of a source and a drain of the fourth transistor is electrically connected to the second line, the other of the source and the drain of the fourth transistor is electrically connected to a gate of the first transistor, a gate of the fourth transistor is electrically connected to a gate of the second transistor,
- wherein one of a source and a drain of the fifth transistor is electrically connected to a fourth line,
- wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the first transistor,
- wherein one of a source and a drain of the sixth transistor is electrically connected to the fourth line,
- wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the first transistor,
- wherein one of a source and a drain of the seventh transistor is electrically connected to the third line,
- wherein the other of the source and the drain of the seventh transistor is electrically connected to the gate of the first transistor,
- wherein a gate of the seventh transistor is electrically connected to a gate of the third transistor,
- wherein each channel region of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, and the seventh transistor includes an oxide semiconductor.
18 more elements
Dependencies are inferred from the claim text.