US 2017/0365624 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.

Claims20

Dependent claims

A semiconductor device comprising:

an oxide semiconductor layer;
a gate electrode above the oxide semiconductor layer;
a gate insulation layer between the oxide semiconductor layer and the gate electrode;
a first insulation layer above the oxide semiconductor layer, the first insulation layer having a first aperture part;
a wiring including an aluminum layer above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part;
a barrier layer including aluminum oxide, the barrier layer covering above the first insulation layer, above the wiring and side of the wiring;
and
an organic insulation layer above the barrier layer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/619,677Filed 12 Jun 2017

Priority

JP 2016-12168520 Jun 2016

Published

21 Dec 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10D 30/673
Characterised by the electrodes: characterised by the shapes, relative sizes or dispositions of the gate electrodes
H10D 30/6739
Characterised by the electrode materials: conductor-insulator-semiconductor electrodes
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20