Semiconductor Chip and Method for Manufacturing the Same

A semiconductor chip, comprising:

• gate structures formed within a region of the semiconductor chip, the gate structures formed in part based on corresponding gate structure layout shapes used as an input to a lithography process, the gate structure layout shapes positioned in accordance with a gate horizontal grid, the gate horizontal grid including at least seven gate gridlines, wherein adjacent gate gridlines are separated from each other by an as-fabricated gate pitch of less than or equal to about 193 nanometers, each gate structure layout shape having a substantially rectangular shape and having an as-fabricated gate structure width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along a corresponding gate gridline, wherein each gate gridline has at least one gate structure layout shape positioned thereon, wherein each pair of gate structure layout shapes that are adjacently positioned on a same gate gridline are separated from each other by an as-fabricated line end-to-line end gap of less than or equal to about 193 nanometers, wherein at least one gate structure within the region is a first-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region,
• wherein each gate structure that forms any transistor gate electrode within the region has a respective top surface in physical and electrical contact with a corresponding contact structure formed in part based on corresponding contact structure layout shape having a substantially rectangular shape, wherein each contact structure that contacts a given gate structure does not contact another gate structure, wherein each contact structure layout shape has a corresponding length greater than a corresponding width and is oriented to have its corresponding length extend in an x-direction,
• wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of any transistor within the region is formed in part based on corresponding diffusion region layout shape having a substantially rectangular shape,
• wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch.

A semiconductor chip, comprising:

• gate structures formed within a region of the semiconductor chip, the gate structures formed in part based on corresponding gate structure layout shapes used as an input to a lithography process, the gate structure layout shapes positioned in accordance with a gate horizontal grid, the gate horizontal grid including a number of gate gridlines, wherein adjacent gate gridlines are separated from each other by an as-fabricated gate pitch of less than or equal to about 193 nanometers, each gate structure layout shape having a substantially rectangular shape and having an as-fabricated gate structure width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along a corresponding gate gridline, wherein each gate gridline has at least one gate structure layout shape positioned thereon, wherein each pair of gate structure layout shapes that are adjacently positioned on a same gate gridline are separated from each other by an as-fabricated line end-to-line end gap of less than or equal to about 193 nanometers, wherein at least one gate structure within the region is a first-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region,
• wherein each of at least six gate structures within the region has a respective top surface in physical and electrical contact with a corresponding at least six contact structures that are each formed in part based on corresponding contact structure layout shape having a substantially rectangular shape, wherein each of the at least six contact structures is in physical contact with only one corresponding gate structure, wherein each contact structure layout shape of the at least six contact structures is centered in an x-direction on the gate structure layout shape of the gate structure with which it physical contacts, wherein each contact structure layout shape of the at least six contact structures has a corresponding length greater than a corresponding width and is oriented to have its corresponding length extend in an x-direction,
• wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of any transistor within the region is formed in part based on corresponding diffusion region layout shape having a substantially rectangular shape,
• wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch.