Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsDAE-JIN KWON, KANG-ILL SEO
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Abstract
A semiconductor device includes a substrate, a first pattern, a first gate electrode, and a second pattern. The first pattern is disposed on the substrate and extends in a first direction substantially vertical to an upper surface of the substrate, and includes a first part, a second part and a third part sequentially disposed on the substrate. The first gate electrode is connected to the second part and extends in a second direction different from the first direction. The second pattern is disposed on the substrate, extends in the first direction, is connected to the first part, and does not contact the first gate electrode.
Claims17
1-7. (canceled)
A semiconductor device, comprising:
- a static random-access memory (SRAM) cell comprising a first pullup transistor, a first pulldown transistor and a first pass transistor formed on a substrate,
- wherein the first pulldown transistor comprises a first pattern extending in a first direction substantially vertical to an upper surface of the substrate, a first gate electrode that covers a part of the first pattern, and a second pattern that does not contact the first gate electrode that extends in the first direction and that has a first common drain formed therein,
- wherein the first pullup transistor comprises a third pattern extending in the first direction, and a second gate electrode that covers a part of the third pattern,
- wherein the first pass transistor comprises a fourth pattern extending in the fit direction, and a third gate electrode that covers a part of the fourth pattern,
- wherein the first pattern and the third pattern are spaced apart in a second direction intersecting the first direction,
- wherein the first pattern and the fourth pattern are spaced apart in a third direction intersecting the first direction and the second direction, and
- wherein the first pullup transistor, the first pulldown transistor and the first pass transistor share the second pattern.
(canceled)
16-20. (canceled)
A semiconductor device, comprising:
- a first pulldown transistor disposed on a substrate, wherein the first pulldown transistor comprises a first pattern that extends in a first direction substantially vertical to an upper surface of the substrate, a first gate electrode that covers a part of the first pattern, and a second pattern that does not contact the first gate electrode that extends in the first direction and that has a first common drain formed therein;
- a first pullup transistor;
- a first pass transistor sharing the second pattern with the first pulldown transistor and the first pullup transistor;
- and
- a second pass transistor arranged in parallel with the first pulldown transistor and the first pullup transistor in a second direction crossing the first direction,
- wherein a distance between the first pullup transistor and the first pulldown transistor is smaller than a distance between the first pullup transistor and the second pass transistor.
Dependencies are inferred from the claim text.