Structure and method to prevent epi short between trenches in finfet edram

A method of forming a semiconductor structure comprising:

• forming a deep trench extending through a top semiconductor layer, a buried insulator layer and into a handle substrate of a semiconductor-on-insulator (SOI) substrate;
• forming a deep trench capacitor in a lower portion of the deep trench;
• forming a conductive material cap over the deep trench capacitor to completely fill the deep trench;
• forming a laterally contacting pair of a semiconductor fin and a conductive strap structure by patterning the top semiconductor layer and the conductive material cap, wherein the conductive strap structure comprises a base portion vertically contacting the deep trench capacitor and a fin portion extending from a proximal portion of the base portion and adjoined to the semiconductor fin;
• forming a dielectric cap layer over the laterally contacting pair of the semiconductor fin and the conductive strap structure and the buried insulator layer;
• and
• recessing the dielectric cap layer and the buried insulator layer, wherein the recessing the dielectric cap layer provides a dielectric cap over a distal portion of the base portion of the conductive strap structure adjoined to the proximal portion, and the recessing the buried insulator layer provides a dielectric fin beneath the semiconductor fin.