Semiconductor structure and manufacturing method thereof

A semiconductor structure, comprising:

• a substrate;
• a redistribution layer (RDL) including a dielectric layer disposed over the substrate and a plurality of conductive members surrounded by the dielectric layer;
• a plurality of conductive pillars disposed over and electrically connected with the plurality of conductive members respectively;
• a first die disposed over the substrate, including a first side facing the RDL and a second side opposite to the first side, and electrically connected with at least one of the plurality of conductive pillars;
• a second die disposed over the substrate, including a third side facing the RDL and a fourth side opposite to the third side, and electrically connected with at least one of the plurality of conductive pillars,
• wherein a thickness of the first die is substantially different from a thickness of the second die, and the second side of the first die and the fourth side of the second die are at substantially same level.

A semiconductor structure, comprising:

• a substrate;
• a plurality of vias extended through the substrate;
• a redistribution layer (RDL) including a dielectric layer disposed over the substrate and a plurality of conductive members surrounded by the dielectric layer and disposed over the plurality of vias;
• a plurality of conductive pillars disposed over the plurality of conductive members respectively;
• a first die disposed over the RDL and electrically connected with at least one of the plurality of conductive members;
• and
• a second die disposed over the RDL and electrically connected with at least one of the plurality of conductive members,
• wherein the first die includes a first surface and a second surface opposite to the first surface, the second die includes a third surface and a fourth surface opposite to the third surface, the plurality of conductive pillars are disposed between the first surface and the dielectric layer or between the third surface and the dielectric layer, a distance between the first surface and the dielectric layer is substantially less than a distance between the third surface and the dielectric layer, a distance between the second surface and the dielectric layer is substantially same as a distance between the fourth surface and the dielectric layer.