Nano Wire Structure and Method for Fabricating the Same

A method comprising:

• depositing a sacrificial layer on a first dielectric layer over a substrate;
• applying a first patterning process, a second patterning process, a third patterning process to the sacrificial layer to form a first group of openings, a second group of openings and a third group of openings, respectively, in the sacrificial layer, wherein:
• three first openings from three different patterning processes form a first triangle;
• and
• three second openings from the three different patterning processes form a second triangle, wherein a first angle of the first triangle is approximately equal to a second angle of the second triangle;
• and
• forming nanowires based on the first group of openings, the second group of openings and the third group of openings.

A method comprising:

• depositing a sacrificial layer on a first dielectric layer over a substrate;
• and
• applying a first patterning process, a second patterning process, a third patterning process to the sacrificial layer to form a first group of openings, a second group of openings and a third group of openings, respectively, in the sacrificial layer, wherein:
• three first openings from three different patterning processes form a first triangle having a first angle;
• three second openings from the three different patterning processes form a second triangle having a second angle;
• and
• three third openings from the three different patterning processes form a third triangle having a third angle, wherein the first angle, the second angle and the third angle are approximately equal to each other.