Articles including ultra low dielectric layers

An article comprising:

• an integrated circuit, the integrated circuit comprising:
• a structure comprising a patterned metal on a surface of a substrate, the patterned metal comprising metal features separated by gaps of an average gap dimension of less than about 100 nm;
• and
• a porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupying all gaps, wherein an interfacial region between the metal features and the porous low dielectric constant material comprises less than about 0.1% by volume of voids, and wherein a maximum critical dimension of the voids is less than about 5 nm.