Method of forming opening pattern
AssigneeUnited Microelectronics Corp.
InventorsYi-Yu Wu, Bin-Siang Tsai
Life of this patent
Estimating the term…
Abstract
A method of forming an opening pattern including the following steps is provided. An ultra low dielectric constant layer, a dielectric hard mask layer and a patterned metal hard mask layer are sequentially formed on a substrate. A portion of the dielectric hard mask layer is removed to form a patterned dielectric hard mask layer by using the patterned metal hard mask layer as a mask. The patterned metal hard mask layer is removed after forming the patterned dielectric hard mask layer. A portion of the ultra low dielectric constant layer is removed to form a first opening by using the patterned dielectric hard mask layer as a mask.
Claims22
A method of forming an opening pattern, comprising:
- sequentially forming an ultra low dielectric constant layer, a dielectric hard mask layer and a patterned metal hard mask layer on a substrate, wherein a method of forming the patterned metal hard mask comprises forming a metal hard mask layer on the substrate and removing a portion of the metal hard mask layer to form the patterned metal hard mask layer, the dielectric hard mask layer is disposed directly on the ultra low dielectric constant layer, and a material of the dielectric hard mask layer comprises aluminum nitride or silicon oxynitride;
- removing a portion of the dielectric hard mask layer to form a patterned dielectric hard mask layer by using the patterned metal hard mask layer as a mask;
- removing the patterned metal hard mask layer after forming the patterned dielectric hard mask layer;
- and
- removing a portion of the ultra low dielectric constant layer to form a first opening by using the patterned dielectric hard mask layer as a mask, wherein the patterned dielectric hard mask layer remains on the ultra low dielectric constant layer after removing the portion of the ultra low dielectric constant layer to form the first opening, wherein the opening pattern has the first opening.
(canceled)
(canceled)
A method of forming an opening pattern, comprising:
- sequentially forming an ultra low dielectric constant layer, a dielectric hard mask layer and a patterned metal hard mask layer on a substrate, wherein a method of forming the patterned metal hard mask comprises forming a metal hard mask layer on the substrate and removing a portion of the metal hard mask layer to form the patterned metal hard mask layer;
- removing a portion of the dielectric hard mask layer to form a patterned dielectric hard mask layer by using the patterned metal hard mask layer as a mask, wherein a remainder portion of the dielectric hard mask layer below a removed portion of the dielectric hard mask layer is retained on the ultra low dielectric constant layer after the patterned dielectric hard mask layer has been formed;
- removing the patterned metal hard mask layer after forming the patterned dielectric hard mask layer;
- and
- removing a portion of the ultra low dielectric constant layer to form a first opening by using the patterned dielectric hard mask layer as a mask, wherein the patterned dielectric hard mask layer remains on the ultra low dielectric constant layer after removing the portion of the ultra low dielectric constant layer to form the first opening, wherein the opening pattern has the first opening.
Dependencies are inferred from the claim text.