Pattern processing method, method for manufacturing semiconductor substrate product, and pretreatment liquid for pattern structure
AssigneeFUJIFILM Corporation
InventorsKeeyoung PARK, Atsushi MIZUTANI
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Abstract
Provided are a pattern processing method for applying a pretreatment liquid for modifying the surface of a pattern structure to a semiconductor substrate provided with the pattern structure, which has at least one of polysilicon, amorphous silicon, Ge, or a low dielectric constant material having a k value of 2.4 or less, a method for manufacturing a semiconductor substrate product, and a pretreatment liquid for a pattern structure.
Claims24
A pattern processing method comprising:
- applying a pretreatment liquid for modifying a surface of a pattern structure to a semiconductor substrate provided with the pattern structure which has at least one of polysilicon, amorphous silicon, Ge, or a low-dielectric-constant material having a k value of 2.4 or less.
A pretreatment liquid for modifying a surface of a pattern structure by applying the pretreatment liquid to a semiconductor substrate provided with the pattern structure having at least one of polysilicon, amorphous silicon, Ge or a low dielectric constant material having a k value of 2.4 or less, the pretreatment liquid being capable of suppressing collapse of the pattern structure when the pattern structure is treated with another treatment liquid including water.
Dependencies are inferred from the claim text.