Method of manufacturing semiconductor device, and semiconductor manufacturing apparatus

A semiconductor manufacturing apparatus, comprising:

• a vacuum container configured to accommodate a workpiece;
• a heating part configured to heat the workpiece;
• a film forming gas supply part configured to supply a film forming gas containing silicon into the vacuum container;
• an etching gas supply part configured to supply a halogen gas for etching a silicon film into the vacuum container;
• a roughness suppressing gas supply part configured to supply a roughness suppressing gas for suppressing roughening of a surface of the silicon film after being etched by the halogen gas;
• and
• a control part configured to output control signals so as to perform:
• forming a silicon film inside a recess formed in a surface of the workpiece by supplying the film forming gas containing silicon to the workpiece;
• subsequently supplying a process gas including the halogen gas and the roughness suppressing gas to the workpiece;
• etching the silicon film formed on a side wall of the recess to enlarge an opening width of the recess by applying thermal energy to the process gas and activating the process gas;
• and subsequently filling silicon into the recess by supplying the film forming gas to the workpiece and depositing the silicon on the silicon film remaining in the recess.