Magnetic Tunnel Junction Memory Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChwen Yu
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Abstract
Various memory devices are disclosed herein. An exemplary memory device includes a first electrode, a first magnetic layer disposed over the first electrode, a second magnetic layer disposed over the first magnetic layer, a barrier layer disposed between the first magnetic layer and the second magnetic layer, and a second electrode disposed over the second magnetic layer. The second electrode includes a magnetic assist region configured to produce a magnetic field that assists in aligning an orientation of a magnetic field of the second magnetic layer.
Claims20
A memory device comprising:
- a first electrode;
- a first magnetic layer disposed over the first electrode;
- a second magnetic layer disposed over the first magnetic layer;
- a barrier layer disposed between the first magnetic layer and the second magnetic layer;
- and
- a second electrode disposed over the second magnetic layer, wherein the second electrode includes a magnetic assist region configured to produce a magnetic field that assists in aligning an orientation of a magnetic field of the second magnetic layer.
A memory device comprising:
- a first electrode;
- a first magnetic layer disposed over the first electrode;
- a second magnetic layer disposed over the first magnetic layer;
- a barrier layer disposed between the first magnetic layer and the second magnetic layer;
- and
- a second electrode disposed over the second magnetic layer, wherein the second electrode includes a magnetic assist region configured to assist in inducing a magnetic field in the second magnetic layer.
A memory device comprising:
- a first electrode;
- a second electrode;
- a device body disposed between the first electrode and the second electrode, wherein the device body includes:
- a first magnetic layer disposed over the first electrode, and
- a second magnetic layer disposed over the first magnetic layer;
- and
- wherein the second electrode includes a magnetic assist region configured to produce a magnetic field that assists in aligning an orientation of a magnetic field of the second magnetic layer, and further wherein the magnetic assist region includes a winding orientation substantially perpendicular to a longitudinal axis of the device body.
Dependencies are inferred from the claim text.