US 2017/0362701 A1 · CENTRAL SOURCE DELIVERY FOR CHEMICAL VAPOR DEPOSITION SYSTEMS

Abstract

According to embodiments, systems and methods are described herein that facilitate use of a Chemical Vapor Deposition (CVD) system continuously. The systems and methods shown herein include multiple precursor gas sources, and structures for independently connecting or disconnecting those sources for replacement. Furthermore, by providing user inputs for diluting the outputs of these multiple precursor gas sources, mixtures of precursor gas in carrier gas can be generated that have sufficiently low concentrations to be routed to a remove CVD system even at relatively low temperatures. Therefore, in embodiments many precursor gas sources, located remotely from the CVD chamber, can be independently operated and replaced as needed without interrupting a supply of precursor gas to the CVD chamber.

Claims20

Dependent claims

A system for providing a continuous source of a precursor gas mixture having a desired concentration, the system comprising:

a user interface comprising a plurality of carrier gas inputs;
a primary precursor gas source configured to receive a carrier gas from one of the plurality of carrier gas inputs and produce a primary precursor gas mixture;
an auxiliary precursor gas source configured to receive a carrier gas from one of the plurality of carrier gas inputs and produce an auxiliary precursor gas mixture;
and
an output configured to receive a continuous flow of the precursor gas mixture by combining:
at least a portion of the primary precursor gas mixture;
at least a portion of the auxiliary precursor gas mixture;
and
a carrier gas from at least one of the plurality of carrier gas inputs.

6 more elements

Dependencies are inferred from the claim text.

Central source delivery for chemical vapor deposition systems

Life of this patent

Central source delivery for chemical vapor deposition systems

Life of this patent

Abstract

Claims20