Integrated Structures Having Gallium-Containing Regions

An integrated structure, comprising:

• a conductive gate;
• a charge-storage region under the conductive gate;
• a tunneling region under the charge-storage region;
• a semiconductor-containing channel region under the tunneling region, the semiconductor-containing channel region comprising monocrystalline silicon and being part of a monocrystalline-silicon substrate that extends laterally outward beyond the charge-storage region along a cross-section;
• and
• wherein the tunneling region includes at least one dielectric material directly adjacent a gallium-containing material.

An integrated structure, comprising:

• a conductive gate;
• a charge-trapping region under the conductive gate;
• a first oxide under the charge-trapping region;
• a gallium-containing material under the first oxide;
• a second oxide under the gallium-containing material;
• and
• a channel region under the second oxide, the channel region comprising monocrystalline silicon.