US 2017/0323956 A1 · PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

Abstract

A method of forming a semiconductor device that includes forming a fin structure from a bulk semiconductor substrate and forming an isolation region contacting a lower portion of a sidewall of the fin structure, wherein an upper portion of the sidewall of the fin structure is exposed. A sacrificial spacer is formed on the upper portion of the sidewall of the fin structure. The isolation regions are recessed to provide an exposed section of the sidewall of the fin structure. A doped semiconductor material is formed on the exposed section of the lower portion of the sidewall of the fin structure. Dopant is diffused from the doped semiconductor material to a base portion of the fin structure.

Claims20

Dependent claims

A finFET semiconductor device comprising:

a fin structure including a channel region portion, a source region portion, a drain region portion, and a punch through stopper dopant region present at a base of the fin structure for the source region portion and the drain region portion, wherein at least one of the source region portion and the drain region portion has a stepped sidewall with a base width that is greater than a width of an upper surface of said at least one of the source region portion and the drain region portion;
and
a gate structure present on the channel region portion of the fin structure.

Dependencies are inferred from the claim text.

Facts

Application

15/656,326Filed 21 Jul 2017

Priority

16 Apr 2014

Published

9 Nov 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10D 30/0241
Of fin field-effect transistors [FinFET]: doping of vertical sidewalls, e.g. using tilted or multi-angled implants
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/62
Insulated-gate field-effect transistors [IGFET]: fin field-effect transistors [FinFET]
H10D 30/6219
Fin field-effect transistors [FinFET]: characterised by the source or drain electrodes

Family

Application61/980,292Us provisional application · filed 16 Apr 2014

Application14/578,842Division · filed 22 Dec 2014

Application15/250,207Division · filed 29 Aug 2016

Application15/656,326Division

US 10,103,251 B2Related patent

US 10,224,420 B2Related patent

US 2015/0303284 A1Published application

US 2016/0372589 A1Published application

US 9,559,191 B2Related patent

US 2017/0323956 A1This patent

From the US filing history. Foreign family members aren’t listed.

Punch through stopper in bulk finfet device

Life of this patent

Punch through stopper in bulk finfet device

Life of this patent

Abstract

Claims20