Fin-type field effect transistor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung Tsai, Kei-Wei Chen
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Abstract
A fin-type field effect transistor including a substrate, insulators, a gate stack, a seal spacer, a first offset spacer, and a second offset spacer is described. The substrate has fins thereon. The insulators are located over the substrate and between the fins. The gate stack is located over the fins and over the insulators. The seal spacer is located over the sidewall of the gate stack. The first offset spacer is located over the seal spacer. The second offset spacer is located over the first offset spacer.
Claims20
A fin-type field effect transistor, comprising:
- a substrate having a plurality of fins;
- a plurality of insulators, located over the substrate and between the fins;
- a gate stack, located over the fins and on the insulators;
- a seal spacer, located over a sidewall of the gate stack;
- and
- a first offset spacer, located over the seal spacer and having a dielectric constant of 3-5.
A fin-type field effect transistor, comprising:
- a substrate having a plurality of fins;
- a plurality of insulators, located over the substrate and between the fins;
- a gate stack, located over the fins and on the insulators;
- a seal spacer, located over a sidewall of the gate stack, wherein a material of the seal spacer comprises SiCN with a carbon concentration of 1-12 at %;
- a first offset spacer, located over the seal spacer;
- a dummy spacer, located over the first offset spacer, wherein a material of the dummy spacer comprises SiCN with a carbon concentration of 0.5-2 at %;
- and
- a second offset spacer, located over the dummy spacer.
A manufacturing method of a fin-type field effect transistor, comprising:
- providing a substrate;
- patterning the substrate to form a plurality of fins;
- forming a plurality of insulators between the fins;
- forming a stack structure over the substrate and on the insulators, wherein the stack structure covers portions of the fins;
- forming a seal spacer over a sidewall of the stack structure;
- forming a first offset spacer over the seal spacer;
- forming a dummy spacer over the first offset spacer;
- forming a plurality of recesses in the fins by removing a plurality of portions of the fins that are not covered by the stack structure;
- forming a plurality of strained material portions in the recesses between the insulators and on two opposite sides of the stack structure;
- forming a second offset spacer over the dummy spacer;
- and
- performing a treatment process to passivate dangling bonds of the second offset spacer.
Dependencies are inferred from the claim text.