Semiconductor Devices and Methods for Forming the Same

A semiconductor device, comprising:

• a cell semiconductor layer;
• a plurality of cell gate conductive patterns on the cell semiconductor layer and extending from a cell array area to a step area, wherein the plurality of cell gate conductive patterns comprise doped semiconductor;
• a cell vertical structure extending through the plurality of cell gate conductive patterns;
• and
• a plurality of cell gate contact structures on respective ones of the plurality of cell gate conductive patterns in the step area,
• wherein each of the plurality of cell gate conductive patterns comprises a cell gate contact region under a respective one of the plurality of cell gate contact structures,
• wherein the cell gate contact region that is in the step area comprises implanted impurities of a first element, and
• wherein a concentration of the implanted impurities of the first element in the cell gate contact region is higher than a concentration of implanted impurities of the first element in the respective one of the plurality of cell gate conductive patterns in the cell array area.

A semiconductor device, comprising:

• a vertical memory cell structure extending from a cell semiconductor layer in a first direction perpendicular to a surface of the cell semiconductor layer;
• a cell gate conductive pattern on a portion of the vertical memory cell structure, wherein the cell gate conductive pattern comprises doped silicon;
• and
• a cell gate contact structure extending in the first direction from a cell gate contact region in a portion of the cell gate conductive pattern,
• wherein the cell gate contact region comprises implanted impurities of a first element, and
• a concentration of the implanted impurities of the first element in the cell gate contact region is higher than a concentration of the first element in another portion of the cell gate conductive pattern other than the cell gate contact region.