Thyristor Volatile Random Access Memory and Methods of Manufacture

A method of dynamically operating an array of vertical thyristor memory cells, the array intersected by a plurality of first and second lines, the first lines orthogonal to the second lines, each vertical thyristor memory cell having an anode coupled to one of the first lines and having a cathode coupled to the one of the second lines, the method comprising:

• writing data into the vertical thyristor memory cells of the array, the written data stored as the vertical thyristor memory cells turned off or on;
• allowing the turned on vertical thyristor memory cells to discharge;
• and
• periodically refreshing all the turned on vertical thyristor memory cells in the array before loss of data so that the data stored in the memory cells of the array is maintained.