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US 2017/0323789 A1Published application
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Hideyuki KISHIDA
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Abstract
The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.
Claims11
A method for forming an oxide semiconductor film, comprising:
- supplying a gas containing one or more selected from the group consisting of a rare gas and oxygen into a deposition chamber in which partial pressures of a gas having a mass-to-charge ratio of 18, a gas having a mass-to-charge ratio of 28, and a gas having a mass-to-charge ratio of 44, which are measured with a quadrupole mass analyzer, are each 3×10−5 Pa or less;
- and
- forming an oxide semiconductor film in the deposition chamber by a sputtering method.
A method for forming an oxide semiconductor film, comprising:
- supplying a gas containing one or more selected from the group consisting of a rare gas and oxygen into a deposition chamber in which leakage rates of a gas having a mass-to-charge ratio of 44, a gas having a mass-to-charge ratio of 18, and a gas having a mass-to-charge ratio of 28, which are measured with a quadrupole mass analyzer, are 3×10−6 Pa·m3/s or less, 1×10−7 Pa·m3/s or less, and 1×10−5 Pa·m3/s, respectively;
- and
- forming an oxide semiconductor film in the deposition chamber by a sputtering method.
A method for manufacturing a semiconductor device comprising:
- forming an oxide semiconductor film, a gate insulating film adjacent to the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,
- wherein the oxide semiconductor film is formed by supplying a gas containing one or more selected from the group consisting of a rare gas and oxygen into a deposition chamber in which a partial pressure of a gas having a mass-to-charge ratio of 44, which is measured with a quadrupole mass analyzer, is 3×10−5 Pa or less, and performing a sputtering method in which power is applied to a target in the deposition chamber.
A method for manufacturing a semiconductor device, comprising:
- forming a transistor including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,
- wherein the oxide semiconductor film is formed by supplying a gas containing one or more selected from the group consisting of a rare gas and oxygen into a deposition chamber in which a leakage rate of a gas having a mass-to-charge ratio of 44, which is measured with a quadrupole mass analyzer, is 3×10−6 Pa·m3/s or less, and performing a sputtering method in the deposition chamber.
Dependencies are inferred from the claim text.