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US 2017/0322495 A1Published application
Composition for removing photoresist and method for removing photoresist using the same
AssigneeUniversity-Industry Foundation, Yonsei University
InventorsSang Woo LIM, Eun Seok OH
Life of this patent
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Abstract
Provided are a composition for removing a photoresist and a method for removing a photoresist using the same. According to the method, a high-dose ion implanted photoresist may be effectively removed without damage such as etching or oxidation of a semiconductor substrate.
Claims12
A composition for removing a photoresist, comprising:
- a first solvent having a molar volume of 70 cm3/mol or less;
- and
- a second solvent having a Hansen relative energy difference from a photoresist of less than 1.05.
A method for removing a photoresist, comprising:
- reacting a semiconductor substrate on which a photoresist is formed with a composition comprising a first solvent having a molar volume of 70 cm3/mol or less, a second solvent having a Hansen relative energy difference from the photoresist of less than 1.05.
Dependencies are inferred from the claim text.