Psva liquid crystal display panel and manufacture method thereof

A manufacture method of a PSVA liquid crystal display panel, comprising steps of:

• step 1, providing a second substrate, and manufacturing a thin film transistor on the second substrate;
• the thin film transistor comprises a gate, a source and a drain;
• step 2, deposing a passivation layer on the thin film transistor and the second substrate;
• step 3, coating photoresist on the passivation layer, and employing a multi tone mask to implement exposure, development to the photoresist to obtain a photoresist layer, and the multi tone mask comprises a full exposure region employed for forming a via hole in the passivation layer, and a half exposure region employed for forming trenches in the passivation layer, and the half exposure region comprises at least three kinds of transmittances employed for forming the trenches of at least three kinds of depths;
• step 4, employing the photoresist layer to be a shielding layer to etch the passivation layer to obtain the photoresist layer which is patterned, and the patterned photoresist layer comprises a plurality of trenches on an upper surface of the passivation layer, and a via hole penetrating the passivation layer and correspondingly being located above the drain, and the trenches have at least three kinds of depths;
• step 5, stripping the photoresist layer which is remained, and forming a pixel electrode on the photoresist layer with sputter to obtain a lower substrate;
• the pixel electrode is entirely attached to the passivation layer which is patterned and comprises a corresponding pattern with the passivation layer, and the pixel electrode penetrates the via hole and is connected with the drain;
• step 6, providing an upper substrate, and the upper substrate comprises a first substrate, and a common electrode located on the first substrate;
• implementing cell process to the upper substrate and the lower substrate to obtain the PSVA liquid crystal display panel.

A PSVA liquid crystal display panel, comprising an upper substrate, a lower substrate oppositely located to the upper substrate and a liquid crystal layer located between the upper substrate and the lower substrate;

• the upper substrate comprises a first substrate, and a common electrode located on the first substrate;
• the lower substrate comprises a plurality of pixel units, and each pixel unit comprises a second substrate, a thin film transistor located on the second substrate, a passivation layer located on the second substrate and the thin film transistor, and a pixel electrode located on the passivation layer;
• an upper surface of the passivation layer is provided with a plurality of trenches, and the plurality of trenches have at least three kinds of depths;
• the pixel electrode is an entire surface electrode of which a thickness is uniform and continuous;
• the pixel electrode is entirely attached to the passivation layer which is patterned and comprises a corresponding pattern with the passivation layer;
• wherein a thickness of the passivation layer is great than or equal to 5000 Å;
• wherein the thin film transistor comprises a gate, a source and a drain, and the passivation layer comprises a via hole correspondingly located above the drain, and the pixel electrode penetrates the via hole and is connected with the drain of the thin film transistor;
• wherein the via hole and the trenches are manufactured at the same time by one photolithographic process with one multi tone mask.