Semiconductor Devices and Methods for Testing a Gate Insulation of a Transistor Structure

A semiconductor device comprising a first test structure, wherein:

• the first test structure comprises a first portion of a conductive structure and a second portion of the conductive structure located within a first lateral wiring layer of a layer stack of the semiconductor device;
• the first portion of the conductive structure of the first test structure is electrically connected to the second portion of the conductive structure of the first test structure through a third portion located within a second lateral wiring layer of the layer stack arranged above the first lateral wiring layer;
• the first portion of the conductive structure of the first test structure is electrically connected to a gate of a test transistor structure, a doping region of the test transistor structure or an electrode of a test capacitor;
• the first portion of the conductive structure of the first test structure is electrically connected to a first test pad of the first test structure;
• and
• a sum of a lateral area occupied by the first portion of the conductive structure of the first test structure and a lateral area occupied by the second portion of the conductive structure of the first test structure is at least larger than 10 times a lateral area occupied by the gate of the test transistor structure or the electrode of the test capacitor.