Light Emitter Devices, Optical Filter Structures and Methods for Forming Light Emitter Devices and Optical Filter Structures

A method for forming a light emitter device, the method comprising:

• forming a structured sacrificial layer above a heater carrier structure, wherein a heater structure is arranged at the heater carrier structure;
• forming an insulation layer on the structured sacrificial layer;
• removing a portion of the insulation layer until the structured sacrificial layer is uncovered to obtain a smooth surface;
• forming a cover structure on the smooth surface;
• forming at least one hole through the cover structure to the structured sacrificial layer;
• removing the structured sacrificial layer to obtain a cavity between the heater carrier structure and the cover structure;
• and
• sealing the at least one hole at an ambient pressure of less than 100 mbar.

An optical filter structure comprising:

• a plurality of semiconductor layers of a filter layer stack;
• and
• a plurality of cavity layers of the filter layer stack arranged alternatingly to the semiconductor layers of the plurality of semiconductor layers,
• wherein a thickness of the semiconductor layers of the plurality of semiconductor layers is less than 2 μm and a thickness of the cavity layers of the plurality of cavity layers is less than 4 μm so that light passing the filter layer stack comprises a spectral maximum at a desired optical wavelength.

A method for forming an optical filter structure, the method comprising:

• forming a plurality of semiconductor layers and a plurality of sacrificial layers of an intermediate layer stack, wherein the plurality of sacrificial layers is located alternatingly to the semiconductor layers of the plurality of semiconductor layers;
• forming at least one hole through the intermediate layer stack to at least a lowest sacrificial layer of the plurality of sacrificial layers;
• and
• removing the plurality of sacrificial layers to obtain a filter layer stack comprising the plurality of semiconductor layers and a plurality of cavity layers arranged alternatingly to the semiconductor layers of the plurality of semiconductor layers,
• wherein a thickness of semiconductor layers of the plurality of semiconductor layers is less than 2 μm and a thickness of cavity layers of the plurality of cavity layers is less than 4 μm so that light passing the filter layer stack comprises a spectral maxi-mum at a desired optical wavelength.