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US 2017/0288620 A1Published application
Current reuse field effect transistor amplifier
AssigneeMitsubishi Electric Corporation
InventorYoshihiro TSUKAHARA
Life of this patent
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Abstract
A current reuse FET amplifier according to the present invention provides an effect of reducing a variation of bias current of the amplifier, with gate voltage or a resistor for self-biasing of an FET of the amplifier changing in accordance with a process variation of saturation current Idss of the FET.
Claims7
A current reuse field effect transistor amplifier comprising:
- a first field effect transistor including a first gate to which a radio frequency (RF) signal is input, a first source, and a first drain;
- a first resistor connected between the first source and a terminal for grounding;
- a second field effect transistor including a second source, a second gate connected to the first drain, and a second drain that is connected to a terminal for power supply and outputs the RF signal;
- a second resistor connected between the second source and the second gate;
- a third field effect transistor including a third source, a third drain connected to the terminal for power supply, and a third gate connected to the terminal for grounding;
- a fourth field effect transistor including a fourth source, a fourth drain, and a fourth gate connected to the third source;
- one or a plurality of diodes connected in series between the fourth source and the terminal for grounding;
- a third resistor connected between the terminal for power supply and the fourth drain, and a fourth resistor connected between the fourth drain and the first gate,
- wherein
- the first to the fourth field effect transistors are each a depletion mode field effect transistor.
7 more elements
A current reuse field effect transistor amplifier comprising:
- a first field effect transistor including a first gate to which a radio frequency (RF) signal is input, a first source, and a first drain;
- a second field effect transistor including a second source, a second gate connected to the first drain, and a second drain that is connected to a terminal for power supply and outputs the RF signal;
- a third field effect transistor including a third source, a third drain connected to the terminal for power supply, and a third gate connected to a terminal for grounding;
- a fourth field effect transistor including a fourth source, a fourth drain, and a fourth gate connected to the third source;
- one or a plurality of diodes connected in series between the fourth source and the terminal for grounding;
- a first resistor connected between the first gate and the terminal for grounding;
- a second resistor connected between the terminal for power supply and the third drain;
- a fifth field effect transistor including a fifth gate, a fifth drain connected to the first source, and a fifth source connected to the terminal for grounding;
- a sixth field effect transistor including a sixth gate, a sixth drain connected to the second source, and a sixth source connected to the second gate;
- a third resistor connected between the fourth drain and the fifth gate;
- and
- a fourth resistor connected between the fourth drain and the sixth gate, wherein
- the first to the sixth field effect transistors are each a depletion mode field effect transistor.
10 more elements
Dependencies are inferred from the claim text.