Power amplification module

A power amplification module comprising:

• a first bipolar transistor which amplifies and outputs a radio frequency signal input to the base of the first bipolar transistor;
• a current source which outputs a control current;
• a second bipolar transistor which is connected to an output terminal of the current source, a first current out of the control current being input to the collector of the second bipolar transistor, the base of the second bipolar transistor being connected to the base of the first bipolar transistor;
• a control voltage generation circuit which is connected to the output terminal of the current source and generates a control voltage according to a second current out of the control current;
• and
• a first FET, the drain of the first FET being supplied with a power supply voltage, the source of the first FET being connected to the base of the first bipolar transistor, and the gate of the first FET being supplied with the control voltage,
• wherein the control voltage generation circuit includes
• a third bipolar transistor, the collector of the third bipolar transistor being supplied with the power supply voltage and the base of the third bipolar transistor being connected to the output terminal of the current source, and
• a resistor, a first end of the resistor being connected to the emitter of the third bipolar transistor and a second end of the resistor being grounded, and
• the control voltage is output from a connection point of the third bipolar transistor and the resistor.