Magneto-resistance device
AssigneeYeda Research and Development Co. Ltd.
InventorsOren TAL, David RAKHMILEVICH
Life of this patent
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Abstract
This invention relates to structures comprising magnetic materials and conjugated molecules. The invention relates to magneto-resistive devices based on such structures. Structures and devices of the invention can be used as magnetic switches, magnetic sensors and in devices such in/as memory devices.
Claims49
A magneto-resistive device comprising at least one electrode, said electrode comprising a surface, wherein said surface comprising a ferromagnetic material, wherein said surface is attached to at least one conjugated molecule, such that said molecule is coupled to said surface via π-d hybridization between π molecular orbitals and d orbitals of the ferromagnetic material.
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A magnetic memory device, comprising an array of junctions, each formed by a layer of conjugated molecules bridging ferromagnetic surfaces of two electrodes, wherein said conjugated molecule is coupled to the ferromagnetic surface of at least one of the electrodes via π-d hybridization of n molecular orbitals and d orbitals of the ferromagnetic material of said electrode.
A layered magneto-resistive device comprising:
- a first magnetic material layer;
- a molecular layer comprising a first surface and a second surface;
- and
- a second magnetic material layer;
- wherein said first surface of said molecular layer is in contact with said first magnetic material layer and wherein said second surface of said molecular layer is in contact with said second magnetic material layer, such that:
- molecules of said first surface are coupled to said first magnetic material layer via π-d hybridization between π molecular orbitals and d orbitals of said magnetic material;
- and
- molecules of said second surface are coupled to said second magnetic material layer via π-d hybridization between π molecular orbitals and d orbitals of said second magnetic material.
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A layered magneto-resistive device comprising:
- a first magnetic material layer;
- a non-magnetic metal layer;
- a molecular layer comprising a first surface and a second surface;
- and
- a second magnetic material layer;
- wherein said first surface of said molecular layer is in contact with said non-magnetic metal layer and wherein said second surface of said molecular layer is in contact with said second magnetic material layer, such that:
- molecules of said first surface are coupled to said non-magnetic metal layer;
- and
- molecules of said second surface are coupled to said second magnetic material layer via π-d hybridization between π molecular orbitals and d orbitals of said magnetic material.
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A layered magneto-resistive device comprising:
- a first magnetic material layer;
- a dielectric layer;
- a molecular layer comprising a first surface and a second surface;
- and
- a second magnetic material layer;
- wherein said first surface of said molecular layer is in contact with said dielectric layer and wherein said second surface of said molecular layer is in contact with said second magnetic material layer, such that:
- molecules of said first surface are coupled to said dielectric;
- and
- molecules of said second surface are coupled to said second magnetic material layer via π-d hybridization between π molecular orbitals and d orbitals of said magnetic material.
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Dependencies are inferred from the claim text.